PART |
Description |
Maker |
VG3617801BT-10 VG3617801BT-8H VG3617801BT-8L VG361 |
16Mb CMOS Synchronous Dynamic RAM
|
VML[Vanguard International Semiconductor]
|
VG3617801BT-8H |
16Mb CMOS Synchronous Dynamic RAM
|
Vanguard International Semiconductor Corporation
|
VG3617161DT VG3617161DT-6 VG3617161DT-7 VG3617161D |
16Mb CMOS Synchronous Dynamic RAM
|
Vanguard International Semi...
|
VG3617161ET-8 VG3617161ET-7 |
CMOS Synchronous Dynamic RAM 1M X 16 SYNCHRONOUS DRAM, 6 ns, PDSO50
|
Vanguard International Semiconductor Corporation Vanguard International Semiconductor, Corp.
|
MB8501S064AE-100 MB8501S064AE-84 MB8501S064AE-67 |
CMOS 1M×64Bit Synchronous Dynamic Random Access Memory (SDRAM)(CMOS 1M×64同步动态RAM)
|
Fujitsu Limited
|
MB8502S064AC-100 MB8502S064AC-67 MB8502S064AC-84 |
CMOS 2M×64 Bit Synchronous Dynamic Random Access Memory (SDRAM)(CMOS 2M×64位同步动态RAM)
|
Fujitsu Limited
|
MB81117422A-125 |
CMOS 2×2M ×4 Bit
Synchronous Dynamic RAM(CMOS 2×2M ×4 位同步动态RAM)
|
Fujitsu Limited
|
VG37648041AT |
256M:x4, x8, x16 CMOS Synchronous Dynamic RAM
|
VML[Vanguard International Semiconductor]
|
IBM03164B9C IBM0316809C |
16Mb Synchronous DRAM(16M位同步动态RAM) 16MbMbit x 8 I/O x 2 Bank)Synchronous DRAM(16M位(1Mx 8 I/O x 2 组)同步动态RAM)
|
IBM Microeletronics
|
KMM53632000CK |
32MB X 36 DRAM Simm Using 16MB X 4 & 16MB X 1
|
Samsung Semiconductor
|
MK31VT432-10YC |
4194304 Word x 32 Bit Synchronous Dynamic RAM Module (1BANK)(4M瀛??2浣??姝ュ???AM妯″?) 4194304 Word x 32 Bit Synchronous Dynamic RAM Module (1BANK)(4M字32位同步动态RAM模块) 4194304字32位同步动态随机存储器模块BANK)(4分字× 32位同步动态内存模块) 4194304 Word x 32 Bit Synchronous Dynamic RAM Module (1BANK)(4M字2位同步动态RAM模块) From old datasheet system
|
OKI SEMICONDUCTOR CO., LTD.
|